Shipping costs will be calculated based on this address throughout the site.
Select your country
Americas
Argentina
Brazil
Canada
Chile
Colombia
Costa Rica
Dominican Republic
Ecuador
El Salvador
Mexico
Peru
U.S.A.
Uruguay
Europe
Austria
Belgium
Croatia
Czech Republic
Denmark
Finland
France
Germany
Greece
Hungary
Ireland
Italy
Latvia
Malta
Netherlands
Norway
Poland
Portugal
Serbia
Slovakia
Slovenia
Spain
Sweden
Switzerland
United Kingdom
Rest of the world


Multi-Gigahertz Nyquist Analog-to-Digital Converters. Architecture and Circuit Innovations in Deep-Scaled CMOS and FinFET Technologies
Athanasios T. Ramkaj;Marcel J.m. Pelgrom;Michiel S. J. Steyaert (Author) · Springer · Paperback
This book proposes innovative circuit, architecture, and system solutions in deep-scaled CMOS and FinFET technologies, which address the challenges in maximizing the accuracy*speed/power of multi-GHz sample rate and bandwidth Analog-to-Digital Converters (ADC)s. A new holistic approach is introduced that first identifies the major error sources of a converter' building blocks, and quantitatively analyzes their impact on the overall performance, establishing the fundamental circuit-imposed accuracy - speed - power limits. The analysis extends to the architecture level, by introducing a mathematical framework to estimate and compare the accuracy - speed - power limits of several ADC architectures and variants. To gain system-level insight, time-interleaving is covered in detail, and a framework is also introduced to compare key metrics of interleaver architectures quantitatively. The impact of technology is also considered by adding process effects from several deep-scaled CMOS technologies.
The validity of the introduced analytical approach and the feasibility of the proposed concepts are demonstrated by four silicon prototype Integrated Circuits (IC)s, realized in ultra-deep-scaled CMOS and FinFET technologies.
Introduces a new, holistic approach for the analysis and design of high-performance ADCs in deep-scaled CMOS technologies, from theoretical concepts to silicon bring-up and verification;Describes novel methods and techniques to push the accuracy - speed - power boundaries of multi-GHz ADCs, analyzing core and peripheral circuits' trade-offs across the entire ADC chain;Supports the introduced analysis and design concepts by four state-of-the-art silicon prototype ICs, implemented in 28nm bulk CMOS and 16nm FinFET technologies;Provides a useful reference and a valuable tool for beginners as well as experienced ADC design engineers.Do you have a question about the book? Login to be able to add your own question.
