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portada Vertical Gan and Sic Power Devices
Type
Physical Book
Author
Publisher
Year
2018
Language
English
Pages
308
Format
Hardcover
Dimensions
23.4x15.7x2.3 cm
Weight
0.59 kg.
ISBN13
9781630814274
Categories

Vertical Gan and Sic Power Devices

Kazuhiro Mochizuki (Author) · Artech House Publishers · Hardcover

Vertical Gan and Sic Power Devices - Mochizuki, Kazuhiro

Used BookGood Condition Imported to Austria
Delivery: 14 Oct - 21 Oct Shipping: 8 to 12 business days.
173,12 €
Import costs and 10% VAT included in the price ✅
(Good Condition)173,12 €

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Synopsis "Vertical Gan and Sic Power Devices"

This is an introduction to vertical gallium nitride (GaN) and silicon carbide (SiC) power devices for students and professionals working in the field of crystal growth, processing, and design. The book uses commercial examples from recent years and includes topics that have not yet been covered by other textbooks on the subject, such as metal/semiconductor junctions, junction terminations, and reliability of vertical GaN and SiC power devices. As GaN can reabsorb recombination radiation (i.e. photon recycling) and SiC cannot, the book emphasises the effects photon recycling. Photon recycling in GaN is attributable to very large peripheral current flowing through non-self-aligned mesa-type p-n junctions. Up till now, this phenomenon has been treated one-dimensionally. The book also offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC.

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