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portada Novel Three-State Quantum Dot Gate Field Effect Transistor: Fabrication, Modeling and Applications
Type
Physical Book
Author
Publisher
Language
English
Pages
134
Format
Hardcover
Dimensions
23.4x15.6x1 cm
Weight
0.39 kg.
ISBN13
9788132216346
Categories

Novel Three-State Quantum Dot Gate Field Effect Transistor: Fabrication, Modeling and Applications

Supriya Karmakar (Author) · Springer · Hardcover

Novel Three-State Quantum Dot Gate Field Effect Transistor: Fabrication, Modeling and Applications - Karmakar, Supriya

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Synopsis "Novel Three-State Quantum Dot Gate Field Effect Transistor: Fabrication, Modeling and Applications"

The book presents the fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter (QDNMOS inverter). It also introduces the development of a circuit model of QDGFET based on Berkley Short Channel IGFET model (BSIM). Different ternary logic circuits based on QDGFET are also investigated in this book. Advanced circuit such as three-bit and six bit analog-to-digital converter (ADC) and digital-to-analog converter (DAC) were also simulated.

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