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portada Gallium Oxide: Materials Properties, Crystal Growth, and Devices
Type
Physical Book
Publisher
Author
Language
English
Pages
764
Format
Paperback
Dimensions
23.4x15.6x4 cm
Weight
1.09 kg.
ISBN13
9783030371555
Categories

Gallium Oxide: Materials Properties, Crystal Growth, and Devices

Higashiwaki, Masataka ; Fujita, Shizuo (Author) · Springer · Paperback

Gallium Oxide: Materials Properties, Crystal Growth, and Devices - Higashiwaki, Masataka ; Fujita, Shizuo

New Book Imported to Austria
Delivery: 25 Sep - 29 Sep Shipping: 6 to 7 business days.
127,13 €
Import costs and 10% VAT included in the price ✅
127,13 €

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Synopsis "Gallium Oxide: Materials Properties, Crystal Growth, and Devices"

This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga₂O₃). Ga₂O₃ has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga₂O₃ is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community.Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga₂O₃.

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