Name: Advances in Non-Volatile Memory and Storage Technology (Woodhead Publishing Series in Electronic and Optical Materials)
Price: 216.90 EUR
Availability: InStock
ISBN: 9780081025840

portada Advances in Non-Volatile Memory and Storage Technology (Woodhead Publishing Series in Electronic and Optical Materials)

Advances in Non-Volatile Memory and Storage Technology (Woodhead Publishing Series in Electronic and Optical Materials)

Type

Physical Book

Publisher

Woodhead Publishing

Year

2019

Language

English

Pages

662

Format

Paperback

ISBN13

9780081025840

Edition No.

Synopsis "Advances in Non-Volatile Memory and Storage Technology (Woodhead Publishing Series in Electronic and Optical Materials) "

Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices.Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memoriesProvides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknessesExamines improvements to flash technology, charge trapping and resistive random access memory

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