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portada Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon (Computational Microelectronics)
Type
Physical Book
Publisher
Author
Language
English
Pages
575
Format
Paperback
ISBN13
9783709172049
Edition No.
1

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon (Computational Microelectronics)

Peter Pichler (Author) · Springer · Paperback

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon (Computational Microelectronics) - Peter Pichler

New Book Imported to Austria
Delivery: 17 Nov - 19 Nov Shipping: 6 to 7 business days.
323,47 €
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323,47 €

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Synopsis "Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon (Computational Microelectronics)"

Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.

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